Strain Measurements in Thin Film Structures by Convergent Beam Electron Diffraction
نویسندگان
چکیده
The Convergent Beam Electron Diffraction technique (CBED) has been applied to determine the lattice strain in Sii-xGez/Si heterostructures and below patterned films on silicon substrates. The well known problem of the stress relaxation which occurs m thinned TEM samples has been overcome, m the case of the heterostructures, by applying the isotropic elasticity theory to the lattice constants measured along different crystallographic directions through the shift of the High Order Laue Zone (HOLZ) lines m the central disk of the CBED
منابع مشابه
Strain analysis in silicon substrates under uniaxial and biaxial stress by convergent beam electron diffraction
A detailed description of the application of the convergent beam electron diffraction sCBEDd technique for studying strain propagation in the Si1−xGex /Si blanket wafers as well as silicon-based metal–oxide–semiconductor field-effect transistors is presented. Specifically, a simple and robust experimental procedure and analysis for silicon lattice strain measurement using the CBED technique is ...
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